Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-12T22:14:51.430Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic and Magneto-Optic Properties of Pulsed Laser Deposited CexY3−xFe5O12 Films

Published online by Cambridge University Press:  10 February 2011

Hyonju Kim ,
Alex Grishin ,
R. Sbiaa ,
H. Le Gall  and
K. V. Rao
Hyonju Kim
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
Alex Grishin
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
R. Sbiaa
Affiliation:
Laboratoire de Magnetisme de Bretagne, CNRS/UPRESA 6135, Universite, 29285 Brest, France
H. Le Gall
Affiliation:
Laboratoire de Magnetisme de Bretagne, CNRS/UPRESA 6135, Universite, 29285 Brest, France
K. V. Rao
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
Get access

Abstract

We present experimental studies of crystalline, magnetic, and magneto-optic (MO) properties and their correlation with the processing parameters of Ce-substituted yttrium iron garnet (CexY3−xFe5O12) thin films grown epitaxially onto single crystal Gd3Ga5O12 (111) substrates by Nd:YAG pulsed laser deposition technique. Rutherford backscattering (RBS) analysis and microprobe energy dispersive spectrometry (EDS) prove the background oxygen pressure, used for films growth, control films stoichiometry. Oxygen ambient pressure appears to be an important parameter to grow CexY3−x, Fe5O12 films with good crystallinity, magnetic properties, as well as enhanced MO effect. It is found that the film fabricated at 50 mTorr oxygen pressure exhibits a maximum Faraday rotation (FR) øF = 1.78 deg/νtm at λ = 633 nm, a maximum saturation magnetization 4πMs = 1255 Gauss with a minimum in-plane coercivity Hc = 35 Oe, and the narrowest full width at half maximum FWHM = 0.06° of the (444) Bragg reflection rocking curve. The analog of the Verdet constant V = øF / 4πMs, also found to be dependent on the oxygen ambient pressure, reaches the value as high as 1.4 deg/νm-kG at 633 nm, suggesting that this material is useful for MO applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 89
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Guillot, M., Gall, H. Le, Desvignes, J. M., and Artinian, M., J. Appl. Phys., 81, 5432 (1997).Google Scholar
2 Xu, You, Yang, Jie Hui, Zhang, Xi Juan, Phys. Rev. B, 50, 13428 (1994).Google Scholar
3 Sekijima, T., Funakoshi, T., Katabe, K., Tahara, K., Fujii, T., Jpn. J. Appl. Phys., 37, 4854 (1998).Google Scholar
4 Hyonju, K., Grishin, A. M., Rao, K. V., Yu, S. C., Sbiaa, R., Gall, H. Le, IEEE Trans. Magn., Vol. 35, 3163 (1999).Google Scholar
5 Vegard, L., Z. Phys. 5, 17(1921).Google Scholar
6 Cho, C.-R., Grishin, Alex, Appl. Phys. Lett. 75, 268 (1999), J. Appl. Phys. 87 (May 1, 2000).Google Scholar