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The Magentic Susceptibility in Ultrathin Films of Magnetic Materials

Published online by Cambridge University Press:  10 February 2011

Kamakhya P. Ghatak ,
P. K. Bose  and
Gautam Majumder
Kamakhya P. Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta-700 009, INDIA.
P. K. Bose
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
Gautam Majumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA.
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Abstract

In this paper we have studied the dia and paramagentic susceptibilities of the holes in ultrathin films of magnetic materials in the presence of a parallel magentic field on the basis of a newly derived dispersion law for such systems. The numerical computations are performed taking Hg1-xMnx Te and Cd1-xMnx Se as examples. Both the susceptibilities increses with decreasing doping and film thickness respectively. It is important to note that not only the paramagnetic-to-diamagnetic susceptibility ratio for the present case deviates from (1/3) in conventional semiconductors, but also that is a critical region, where quenching of the diamagnetic occurs. The theoretical analysis is in agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 157
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCE

[1] Dreifus, D.L., Koblous, R.M., Harris, K.A., Bicknell, R.N., Giles, N. C. and Schetzina, J.F., Appl. Phys. Letts. 51, 931 (1987).Google Scholar
[2] Dreifus, D.L., Kolbus, R.M., Tassitino, J.R., Harper, R.L., Bickness, R.N. and Schetzina, J.F., J. Vac. Sci. Tech. 6A, 2722 (1988).Google Scholar
[3] Bicknell, R.N., Giles-Taylor, N.G., Schetzina, J.F., Anderson, N.G. and Laidig, W.D., J. Vac. Sci. Tech. 4, 212 6 (1986).Google Scholar
[4] Bicknell, R.N., Giles, N.G., Schetzina, J.F., Anderson, N.G. and Laidig, W.D., Appl. Phys. Letts. 46, 238 (1985).Google Scholar
[5] Becla, P., J. Vac. Sci. Tech. 6A, 2725 (1988).Google Scholar
[6] Bicknell, R.N., Gailes, N.G. and Schetzina, J.F., Appl. Phys. Letts. 49, 1095 (1986).Google Scholar
[7] Bicknell, R.N., Giles, N.C., Schetzina, J.F. and Hitzman, C., J. Vac. Sci. Tech. 5A, 3059 (1987).Google Scholar
[8] Harpar, R.L., Hwang, S., Giles, N.C., Bickness, R.N., Schetzina, J.F., Lee, Y.R. and Ramdas, A.K., J. Vac. Sci. Tech. 6A, 2627 (1988).Google Scholar
[9] Dreifas, D.L. and Kolbous, R.M., Appl. Phys. Letts. 53, 1279 (1988).Google Scholar
[10] Furdyna, J.K., J. Appl. Phys. 64, 29 (1988).Google Scholar
[11] Elfros, A.L. and Kakanov, B., J. Exp. Theo. Phys. 96, 218 (1994).Google Scholar