Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:32:42.692Z Has data issue: false hasContentIssue false

Macro-and Microstrain Relaxation in Annealed Ag Films During Ageing at Room Temperature

Published online by Cambridge University Press:  10 February 2011

R. C. Currie
Affiliation:
Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL, Delft, The Netherlands, [email protected]
R. Delhez
Affiliation:
Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL, Delft, The Netherlands, [email protected]
E. J. Mitiemeijer
Affiliation:
Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL, Delft, The Netherlands, [email protected] also at Max Planck Institute for Metals Research, Seestraße 92, 70174, Stuttgart, Germany
Get access

Abstract

The relaxation of thermally induced strain in 500 nm thick polycrystalline Ag layers electron-beam deposited onto Si wafers was traced during ageing at room temperature. The layers consisted predominantly of matrix crystallites with {111} planes parallel to the surface and twin crystallites with {51 l} planes parallel to the surface. The macrostrain in the plane of the layer was determined from the X-ray diffraction line-profile position and the microstrain from the diffraction-line broadening. The residual macrostress relaxed from 160 MPa to 30 MPa in the matrix crystallites and from 170 MPa to 50 MPa in the twin crystallites. Simultaneously with the decrease in macrostress the microstrain decreases significantly for both texture fractions. The strain relaxation behaviour is governed by movement and subsequent annihilation of defects in the layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Alford, T.L., Adams, D., Laursen, T. and Ullrich, B.M., Appl. Phys. Lett. 68 (23), p. 3251 (1996).Google Scholar
2Noyan, I.C. and Cohen, J.B., Residual Stress, (Springer-Verlag, New York, 1987) p. 122.Google Scholar
3Smithells, C.J., Metal Reference Book, (5th edition, Butterworths, London, 1976), p. 977.Google Scholar
4Segmiiller, A. and Murakami, M., in Analytical Techniques for Thin Films, edited by Tu, K. N. and Rosenberg, R. (Treatise on Mat. Sci. and Techn. 27, Academic Press, Boston, 1988), p. 143.Google Scholar
5Warren, B.E., X-ray Diffraction (Addison-Wesley Publishing Company, Reading, MA, 1969), p. 288.Google Scholar
6Velterop, L., Delhez, R., H de Keijser, Th., Mittemeijer, E.J. and Reeefman, D., to be published.Google Scholar
7Delhez, R., de Keijser, Th.H. and Mittemeijer, E.J., Fresenius Z. Anal. Chem. 312 p. 1 (1982).Google Scholar
8 Line-profile Analysis, Philips Analytical X-ray, version 1.0 (1995).Google Scholar
9Hendriks, M., X-ray Diffraction Study of Polycrystalline Silicon Layers, Ph.D. thesis, Delft University, p. 42 (1985).Google Scholar
10Vermeulen, A.C., Delhez, R., de Keijser, Th.H. and Mittemeijer, E.J., J. Appl. Phys. 77 (10), p. 5026 (1995).Google Scholar
11Vook, R.W. and Witt, F., J. Appl. Phys. 36 (7), p. 2169 (1965).Google Scholar
12Vermeulen, A.C., Delhez, R. and Mittemeijer, E.J., Mater. Res. Soc. Proc. 230, p. 103 (1992).Google Scholar