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Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

Published online by Cambridge University Press:  10 February 2011

D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
K. G. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
Zhang Chen
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
V. Craciun
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
P. H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA, J. Perriere, GPS, Universite Paris, France
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Abstract

The growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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