Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T14:30:52.619Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

Published online by Cambridge University Press:  25 February 2011

M. Gail ,
J. Brunner ,
U. Menczigar ,
A. Zrenner  and
G. Abstreiter
M. Gail
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
J. Brunner
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
U. Menczigar
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
A. Zrenner
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
G. Abstreiter
Affiliation:
Walter Schottky Institut, Am Coulombwall, D-8046 Garching, Germany
Get access

Abstract

We report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 21
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sturm, J.C., Manoharan, H., Lenchyshyn, L.C., Thewalt, M.L.W., Rowell, N. L., Noë, J.-P., and Houghton, D.C., Phys. Rev. Lett. 66, 1362 (1991)CrossRefGoogle Scholar
2. Fukatsu, S., Yoshida, H., Usami, N., Fujiwara, A., Takahashi, Y. and Shiraki, Y., Thin Solid Films 222 1 (1992)CrossRefGoogle Scholar
3. Wachter, M., Thonke, K., Sauer, R., Schiffler, F., Herzog, H.-J., and Kasper, E., Thin Solid Films 222 10 (1992)CrossRefGoogle Scholar
4. Robbins, D. J., Calcott, P., and Leong, W. Y., Appl. Phys. Lett. 59 1350 (1991)CrossRefGoogle Scholar
5. Brunner, J., Menczigar, U., Gail, M., Friess, E., Abstrelter, G., Thin Solid Films 222 27 (1992)CrossRefGoogle Scholar
6. Usami, N., Fukatsu, S., and Shiraki, Y. (submitted to Appl. Phys. Lett.)Google Scholar
7. Brunner, J., Nützel, J., Gail, M., Menczigar, U. and Abstreiter, G., presented at AVS Chicago 1992 (unpublished)Google Scholar
8. Weber, J. and Alonso, M. I., Phys. Rev. B 40, 5683 (1989)CrossRefGoogle Scholar
9. Sauer, R., Weber, J., and Stolz, J., Weber, E. R., Ksters, K.-H., and Alexander, H., Appl. Phys. A 36, 1 (1985)CrossRefGoogle Scholar
10. Noël, J.-P., Rowell, N. L., Houghton, D. C. and Perovic, D. D., APL 57, 1037 (1990)Google Scholar
11. Spitzer, J., Thonke, K., Sauer, R., Kibbel, H., Herzog, H.-J., Kasper, E., APL 60, 1729 (1992)Google Scholar
12. Walle, C. G. Van de and Martin, R. M., Phys. Rev. B 34, 5621 (1986)CrossRefGoogle Scholar
13. Colombo, L., Resta, R., and Baroni, S., Phys. Rev. B 44, 5572 (1991)CrossRefGoogle Scholar
14. McVay, G. L. and DuCharme, A. R., Phys. Rev. B 9, 627 (1974)CrossRefGoogle Scholar
15. Lenchyshyn, L.C., Thewalt, M.L., Sturm, J.C., Schwartz, P.V., Prinz, E.J., Rowell, N.L., Noël, J.-P., Houghton, D.C. Google Scholar
16. Williams, E. W. and Bebb, H. B., Semiconductors and Semimetals, edited by Willardson, R. K. and Beer, A. C., Vol. 8 (Academic Press, New York, 1972), p. 321 Google Scholar
17. Blakemore, J. S., Semiconductor Statistics (Pergamon Press, London, 1962), p. 140 Google Scholar
18. Robbins, D. J., Canham, L. T., Barnett, S. J., Pitt, A. D., and Calcott, P., J. Appl. Phys. 71, 1407 (1992)CrossRefGoogle Scholar
19. Greene, R. L., Bajaj, K. K. and Phelps, D. E., Phys. Rev. B 29, 1807 (1984)CrossRefGoogle Scholar
20. Bastard, G., Mendez, E. E., Chang, L. L. and Esaki, L., Phys. Rev. B 26, 1974 (1982)CrossRefGoogle Scholar