Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:34:02.618Z Has data issue: false hasContentIssue false
  • English
  • Français

Luminescence Properties of Silicon Nanocrystals

Published online by Cambridge University Press:  15 February 2011

Shoutian Li ,
Stuart J. Silvers  and
M. Samy El-Shall
Shoutian Li
Affiliation:
Department of Chemistry, Virginia Commonwealth University Richmond, VA 23284–2006
Stuart J. Silvers
Affiliation:
Department of Chemistry, Virginia Commonwealth University Richmond, VA 23284–2006
M. Samy El-Shall
Affiliation:
Department of Chemistry, Virginia Commonwealth University Richmond, VA 23284–2006
Get access

Abstract

Weblike aggregates of coalesced Si nanocrystals are produced by a laser vaporization -controlled condensation technique. SEM micrographs show particles with ∼ 10 nm diameters but the Raman shift suggests the presence of particles as small as ∼ 4 nm. FTIR of the freshly prepared particles shows weak peaks due to the stretching, bending and rocking vibrations of the Si-O-Si bonds indicating the presence of a surface oxidized layer SiOx (x<2).

The particles show luminescence properties that are similar to those of porous Si and Si nanoparticles produced by other techniques. The nanoparticles do not luminesce unless, by exposure to air, they acquire the SiOx passivated coating. They show a short-lived blue emission characteristic of the SiO2 coating and a biexponential longer-lived red emission. The short lifetime component of the red emission, about 12 μs, does not depend on emission wavelength. The longer-lived component has a lifetime that ranges from 90 to over 130 μs (at 300 K), increasing with emission wavelength. The results are consistent with the quantum confinement mechanism as the source of the red photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

To whom inquines should be addressed.

References

REFERENCES

1.Canham, L.T., Appl. Phys. Lett., 57, 1046 (1990).Google Scholar
2.Cullis, A.G. and Canham, L.T., Nature 353, 335 (1991).Google Scholar
3.Brus, L.E., Nature 353, 301 (1991).Google Scholar
4.Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A. and Nakagiri, T., Appl. Phys. Lett. 256, 117 (1992).Google Scholar
5.Wilson, W.L., Szajowski, P.F. and Brus, L.E., Science 262, 1242 (1993).Google Scholar
6.Kanemitsu, Y., Ogawa, T., Shiraishi, K. and Takeda, K., Phys. Rev B. 48, 4883 (1993).Google Scholar
7.Bras, L.E., Szajowski, P.F., Wilson, W.L., Harris, T.D., Schuppler, S. and Citrin, P.H., J. Am. Chem. Soc. 117, 2915 (1995).Google Scholar
8.El-Shall, M.S., Slack, W., Vann, W., Kane, D. and Hanley, D., J. Phys. Chem. 98, 3067 (1994).Google Scholar
9.El-Shall, M.S., Graiver, D., Pernisz, U. and Baraton, M.I., NanoStructured Materials 6, 297 (1995).Google Scholar
10.El-Shall, M.S., Li, S., Turkki, T., Graiver, D., Pernisz, U.C. and Baraton, M.I., J. Phys. Chem. 99, 17805 (1995).Google Scholar
11.El-Shall, M.S., Li, S., Graiver, D. and Pernisz, U.C. in “Nanoteehnologv: Molecularlv Designed Materials”, edited by Chow, G.M. and Gonsalves, K.E. (ACS Symposium Series 622, Washington DC, 1996), Chapter 5, PP. 79–99.Google Scholar
12.Nakamura, M.; Mochizuki, ; Usami, K.Solid State Comm. 50 (12), 1079 (1984).Google Scholar
13.Hayashi, S., Tanimoto, S. and Yamanoto, K., J. Appl. Phys. 68, 5300 (1990).Google Scholar
14.Okada, T., Iwaki, T., Yamamoto, K., Kasahara, H. and Abe, K., Solid State Comm. 49 (8), 809 (1984).Google Scholar
15.Tsu, R., Shen, H. and Dutta, M., Appl. Phys. Lett. 60, 1112 (1992).Google Scholar
16.Prokeds, S.M. in “Nanomaterials: Synthesis. Properties and Applications” edited by Edelstein, A.S. and Cammarata, R.C. (Institute of Physics Publishing, Bristol, 1996), pp. 349–457;Google Scholar
Prokes, S.M., Bull. Am. Phys. Soc. 38, 157 (1993);Google Scholar
Campbell, I.H. and Fauchet, P.M., Solid State Commun. 58 (10), 739 (1986).Google Scholar
17.Kanemitsu, Y., Phys. Rev. B. 49, 16845 (1994).Google Scholar
18.Tamura, H., Ruckschloss, M., Wirschem, T., Veprek, S., Appl. Phys. Lett. 65, 1537 (1994);Google Scholar
Morisaki, H., Hashimoto, H., Ping, F.W., Nozawa, H. and Ono, H., J. Appl. Phys. 74, 2977 (1993).Google Scholar