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Luminescence Properties in Er,O-codoped GaAs Light-Emitting Devices with Double Excitation Mechanism

Published online by Cambridge University Press:  01 February 2011

Yasufumi Fujiwara ,
Kei Fujii ,
Ayafumi Fujita ,
Yuji Ota ,
Yoshiaki Ito ,
Takashi Kawasaki ,
Kota Noguchi ,
Takahiro Tsuji ,
Atsushi Nishikawa  and
Yoshikazu Terai
Yasufumi Fujiwara
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Kei Fujii
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Ayafumi Fujita
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Yuji Ota
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Yoshiaki Ito
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Takashi Kawasaki
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Kota Noguchi
Affiliation:
Kota/[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Takahiro Tsuji
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Atsushi Nishikawa
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
Yoshikazu Terai
Affiliation:
[email protected], Osaka University, Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka, Japan
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Abstract

We fabricated a laser diode (LD) exhibiting a lasing from strained GaInAs quantum wells (QWs) embedded in Er,O-codoped GaAs (GaAs:Er,O) by organometallic vapor phase epitaxy (OMVPE). The lasing wavelength was designed to tune to the energy separation between the second excited states 4I11/2 and the ground state 4I15/2 of Er3+ ions. The threshold current for the lasing at room temperature was six times larger than that of a GaInAs QW-LD without Er doping, reflecting ultrafast carrier capture by an Er-related trap in GaAs:Er,O. The Er intensity revealed initially steep increase with injected current density in the region for spontaneous emission from the GaInAs QWs. In the stimulated QW emission region, the intensity continued to increase with the current density.

Keywords

ErluminescenceIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D01-02
Copyright
Copyright © Materials Research Society 2009

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References

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