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Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

J.C. Sturm ,
X. Xiao ,
Q. Mi ,
L.C. Lenchyshyn  and
M.L.W. Thewalt
J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton Center for Photonic & Optoelectronic Materials (POEM), Princeton University, Princeton, NJ 08544
X. Xiao
Affiliation:
Department of Electrical Engineering, Princeton Center for Photonic & Optoelectronic Materials (POEM), Princeton University, Princeton, NJ 08544
Q. Mi
Affiliation:
Department of Electrical Engineering, Princeton Center for Photonic & Optoelectronic Materials (POEM), Princeton University, Princeton, NJ 08544
L.C. Lenchyshyn
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C. V5A1S6, Canada
M.L.W. Thewalt
Affiliation:
Department of Physics, Simon Fraser University, Burnaby, B.C. V5A1S6, Canada
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Abstract

Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex. heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex. is found to be the reason for reduced PL and EL at high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 69
Copyright
Copyright © Materials Research Society 1993

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