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Luminescence of Si-Implanted InP After Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

D. Kirillov  and
J. L. Merz
D. Kirillov
Affiliation:
Varian Research Center, Palo Alto, CA 94303
J. L. Merz
Affiliation:
University of California - Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA 93106
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Abstract

Changes in the luminescence spectra of InP caused by Si+ implantation and subsequent rapid lamp annealing were studied. It was found that the best activation of dopants was obtained in the case of hot implantation and lamp annealing in regimes close to melting of InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 477
Copyright
Copyright © Materials Research Society 1985

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References

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