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Luminescence of Rare Earth Doped Si/Al/SiO2 Co-Sputtered Films

Published online by Cambridge University Press:  01 February 2011

C. Rozo ,
L. F. Fonseca ,
O. Resto  and
S. Z. Weisz
C. Rozo
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
L. F. Fonseca
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
O. Resto
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
S. Z. Weisz
Affiliation:
Physics Department, University of Puerto Rico at Rio Piedras, San Juan, PR, USA
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Abstract

Er3+, and Nd3+ doped Si/Al/SiO2 and thin films have been prepared by rf co-sputtering. Some of these films were annealed to 700°C. Erbium doped Si/Al/SiO2 films were prepared with two different sputtering configurations: one configuration with a large quantity of Al and a second configuration with a smaller quantity of Al. The configuration with large quantity of Al shows a diminished luminescence at 1.53 μm, but this emission is increased by substrate heating. The configuration with smaller quantity of Al shows emission at 1.525 μm similar in intensity to the Er-doped Si/SiO2. The spectral shape for the 4I13/2→4I15/2 emission is broader than for an analogous Er3+ doped Si/SiO2. The smaller quantity of Al configuration increases the solubility of Nd3+ (and luminescence for high Nd3+ concentration) in Si/SiO2 films and changes the spectral shape of the 4F3/2 emission with respect to the Nd3+ doped Si/SiO2 films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.4
Copyright
Copyright © Materials Research Society 2005

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