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Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate

Published online by Cambridge University Press:  01 February 2011

Matthias Dworzak ,
Thomas Stempel ,
Axel Hoffmann ,
Gijs Franssen ,
Tadeusz Suski ,
R. Czernecki ,
M. Leszczynski  and
I. Grzegory
Matthias Dworzak
Affiliation:
[email protected]
Thomas Stempel
Affiliation:
[email protected]
Axel Hoffmann
Affiliation:
[email protected]
Gijs Franssen
Affiliation:
[email protected]
Tadeusz Suski
Affiliation:
[email protected]
R. Czernecki
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
M. Leszczynski
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
I. Grzegory
Affiliation:
Institute of High Pressures ‘Unipress’, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
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Abstract

Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumi-nescence efficiency in these structures strongly depends on the intensity of carrier excitation. While at low excitation densities the recombination of excited carriers is governed by local-ization effects the behavior drastically changes at higher densities. At room temperature a suppression of nonradiative recombination could be observed that leads to an super linear increase of the luminescence.

Keywords

III-Vnanostructureluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF32-02
Copyright
Copyright © Materials Research Society 2006

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