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Luminescence and Tem-Investigation of Laser Induced Defects in (AI,Ga)As Heterostructures
Published online by Cambridge University Press: 28 February 2011
Abstract
Laser induced defects in (AI,Ga)As heterostructures have been investigated. Luminescencetopography reveals three different defects, a luminescent B, a nonradiative D as well asdark line defects (DLD). Luminescence and excitation spectra together with TEM measurements indicate a point defect or point defect complex for B and D. Defect B is described by a configuration coordinate (CC-) model with low vibrational energies. Defect DLD consists of extended dislocations.
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