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Luminescence and Raman Based Real Time Imaging of Ferroelectric Domain Walls

Published online by Cambridge University Press:  26 February 2011

Volkmar Dierolf ,
Pavel Capek  and
Christian Sandmann
Volkmar Dierolf
Affiliation:
[email protected], Lehigh University, Physics, 16 Memorial Drive East, Bethlehem, PA, 18015, United States
Pavel Capek
Affiliation:
[email protected], Lehigh University, Physics, 16 Memorial Drive East, Bethlehem, PA, 18015, United States
Christian Sandmann
Affiliation:
[email protected], Lehigh University, Physics, 16 Memorial Drive East, Bethlehem, PA, 18015, United States
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Abstract

We studied ferroelectric domain wall regions in lithium niobate using the photoluminescence of intentionally doped rare earth ions (such as Er3+) as well as Raman spectroscopy and present an overview of the current status of our ongoing investigations. We find that the Er emission is a sensitive tool to observe changes in local electric fields as well as reconfiguration of defect dipoles across the domain wall. The Raman spectra, on the other hand can be used to identify charges that accumulate asymmetrically across a domain wall. We further demonstrate that the imaging methods offer sufficient sensitivity to observe the changes associated with a domain in real time while it is moving.

Keywords

ferroelectricRaman spectroscopyoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T08-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Padilla, J., Zhong, W., and Vanderbilt, D., Phys. Rev. B 53, 5969 (1996)Google Scholar
2. Kim, S., Gopalan, V., and Steiner, B., Appl. Phys. Lett. 77, 2051 (2000)Google Scholar
3. Jach, T., Kim, S., Gopalan, V., Durbin, S., and Bright, D., Phys. Rev. B 69, 64113 (2004)Google Scholar
4. Scrymgeour, D., Gopalan, V., Itagi, A., Saxena, A., and Swart, P., Phys. Rev. B 71, 184110 (2005)Google Scholar
5. Dierolf, V., Sandmann, C., Gopalan, V., Kim, S., and Polgar, K., J. Appl. Phys. 93, 2295 (2003).Google Scholar
6. Capek, P., Stone, G., Dierolf, V., Althouse, C., V. Gopalan. Phys. Stat. C 2007, in print,Google Scholar
7. Missey, M., Russel, S., Dominic, V., Batchko, R., and Schepler, K., Optics Express,6, 186 (2000).Google Scholar
8. Scott, J., Malis, S., Sones, C., and Eason, R., Appl. Phys. A 79, 691 (2004)Google Scholar
9. Sandmann, C., Dierolf, V., Physica Status Solidi C2, 136 (2005)Google Scholar
10. Dierolf, V., Sandmann, C., Appl. Phys. B 78, 363–6 (2004)Google Scholar
11. Dierolf, V. and Sandmann, C., J of Lumin. 102–103, 201–5 (2003)Google Scholar
12. Dierolf, V. and Sandmann, C., Ceramics Transaction 196, 143 (2006)Google Scholar