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Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible with CMOS Technology

Published online by Cambridge University Press:  01 February 2011

Carl B. Poitras ,
Michal Lipson ,
Huaqiang Wu  and
Michael G. Spencer
Carl B. Poitras
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Michal Lipson
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Michael G. Spencer
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Continuous-wave and time resolved photoluminescence measurements on europium doped gallium nitride in the form of a powder are presented. The powder is obtained from reacting NH3 and a melt of gallium and europium with bismuth as a wetting agent. Photoluminescence from continuous wave excitation above the GaN bandgap reveals that an optimal concentration of about 1 at.% of Eu gives the most intense emission at 621 nm. Above gap time resolved photoluminescence reveals that energy transfer between the host material (GaN) and the rare earth ions occurs at a faster rate than previously reported for MBE grown GaN:Eu. Applications of the powder are directed towards CMOS compatible light emitters that are spun on silicon. A high temperature anneal of the powder shows no change in the CW photoluminescence spectrum of the powder, confirming CMOS compatibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V3.2
Copyright
Copyright © Materials Research Society 2005

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References

1. Ennen, H., Schneider, J., Pomrenke, G. and Axmann, A, Appl. Phys. Lett., 43, 10 (1983).Google Scholar
2. Steckl, A. J. and Zavada, J. M., MRS Bull., 24, 9 (1999)Google Scholar
3. Steckl, A. J., Heikenfeld, J., Garter, M., Birkhahn, R. and Lee, D. S., Compound Semicond., 6, 48 (2000).Google Scholar
4. Yoshida, A., Nakanishi, Y. and Wakahara, A., Proc. Of the SPIE, 5062, 1 (2003).Google Scholar
5. Zavada, J. M., Thaik, M., Hömmerich, U., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J. and Wilson, R. G., Jnl. Of Alloys and Compounds, 300-301 (2000).Google Scholar
6. Lee, C.-W., Everitt, H. O., Lee, D. S., Steckl, A. and Zavada, J. M., Jnl. Appl. Phys., 95, 12 (2004).Google Scholar
7. Lozykowski, H. J., Jadwisienczak, W. M. and Brown, I., Appl. Phys. Lett., 74, 8 (1999).Google Scholar
8. Hansen, D. M., Zhang, R., Perkins, N. R., Safvi, S., Zhang, L., Bray, K. L. and Kuech, T. F., Appl. Phys. Lett., 72, 10 (1998).Google Scholar
9. Wu, H., Poitras, C. B., Lipson, M. and Spencer, M. G., Appl. Phys. Lett., 86, 18 (2005) (in press).Google Scholar
10. Wu, H., Bourlinos, A., Giannelis, E. P. and Spencer, M. G. in GaN, AlN, InN, and Their Alloys, (Mater. Res. Soc. Symp. Proc. 831, Boston, MA, 2004).Google Scholar