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Low-Temperature Synthesis and Dielectric Properties of Single-Phase Lead Zirconate Titanate Thin Film with a Nano Particle Seeding Technique

Published online by Cambridge University Press:  01 February 2011

Tomokazu Tanase ,
Yoshio Kobayashi ,
Takao Miwa  and
Mikio Konno
Tomokazu Tanase
Affiliation:
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, Aoba, Aramaki-aza, Aoba-ku, Sendai 980–8579, Japan
Yoshio Kobayashi
Affiliation:
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, Aoba, Aramaki-aza, Aoba-ku, Sendai 980–8579, Japan
Takao Miwa
Affiliation:
Hitachi Research Laboratory, Hitachi, Ltd., Omika, Hitachi, Ibaraki 319–1292, Japan
Mikio Konno
Affiliation:
Department of Chemical Engineering, Graduate School of Engineering, Tohoku University, Aoba, Aramaki-aza, Aoba-ku, Sendai 980–8579, Japan
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Abstract

The low temperature synthetic method, which combines chemical solution deposition and nm-seeding technique, was applied to the fabrication of lead zirconate titanate (PZT) thin films. Nano-crystallines of barium strontium titanate (BST) particles were prepared by the hydrolysis reaction of the complex alkoxides. PZT precursor solutions containing the BST particles were spin-coated on Pt/Ti/SiO2/Si substrates to film thickness of 500 − 800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and crystallized PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C3.32
Copyright
Copyright © Materials Research Society 2004

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References

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