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Low-Temperature Sputter-Deposition of Poly-Crystal Silicon Thin-Films

Published online by Cambridge University Press:  10 February 2011

Wen-Chang Yeh  and
Masakiyo Matsumura
Wen-Chang Yeh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12-1 0-okayama, Meguro-ku, Tokyo 152–8550, Japan, [email protected]
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2–12-1 0-okayama, Meguro-ku, Tokyo 152–8550, Japan, [email protected]
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Abstract

Poly-Si films were deposited at temperatures as low as 325°C by a newly proposed method. In the proposed method, both Ni-enhanced crystallization effects and vapor-phase deposition were utilized to reduce the deposition temperature. The X-ray diffraction measurement shows that the films were (110)-oriented at temperatures among 325°C to 419°C. When the partial pressure of hydrogen gas in the deposition chamber exceeds 0.1%, crystallization was disrupted. The characteristics of TFTs and pn junction diodes showed its potential applicability to AMLCDs and sollar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 73
Copyright
Copyright © Materials Research Society 1998

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