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Low-temperature operation of diamond surface-channel field-effect transistors

Published online by Cambridge University Press:  01 February 2011

Minoru Tachiki ,
Hiroaki Ishizaka ,
Tokishige Banno ,
Toshikatsu Sakai ,
Kwang-Soup Song ,
Hitoshi Umezawa  and
Hiroshi Kawarada
Minoru Tachiki
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Hiroaki Ishizaka
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Tokishige Banno
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Toshikatsu Sakai
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Kwang-Soup Song
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Hitoshi Umezawa
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
Hiroshi Kawarada
Affiliation:
School of Science & Engineering, Waseda University, Tokyo, Japan. CREST, Japan Science and Technology Corporation (JST), Japan. E-mail: [email protected]
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Abstract

Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F5.5
Copyright
Copyright © Materials Research Society 2002

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