Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-04T21:12:49.721Z Has data issue: false hasContentIssue false
  • English
  • Français

Low-Temperature Growth of Thin Films of A12O3 with Trimethylaluminum and Hydrogen Peroxide

Published online by Cambridge University Press:  16 February 2011

J. F. Fan ,
K. Sugioka  and
K. Toyoda
J. F. Fan
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan.
K. Sugioka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan.
K. Toyoda
Affiliation:
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan.
Get access

Abstract

Thin films of A12O3 were prepared by sequential surface chemical reaction of trimethylaluminum and hydrogen peroxide at low temperatures. It has been found that hydrogen peroxide reacts very easily with trimethylaluminum, resulting in growth of A12O3 at the temperature as low as the room temperature. Another favorable feature of the technique is that the growth of excellent A12O3 occurs identically wherever the reactants reach, making it possible to completely coat the surface of the sample with arbitrary shape.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 327
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Solanki, R., Ritchie, W.H., and Collins, G.J.: Appl. Phys. Lett. 43(1983) 454.Google Scholar
[2] Higashi, G.S. and Fleming, C.G.: Appl. Phys. Lett. 55(1989) 1963.Google Scholar
[3] Iwai, S., Doi, A., Aoyagi, Y. and Namba, S.: Symp. GaAs and Related Compounds, Heraklion, Greece, 1987, p191.Google Scholar