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Low-Temperature Growth of Si:Er by Electron Cyclotron Resonance Pecvd Using Metal Organics

Published online by Cambridge University Press:  10 February 2011

P. S. Andry ,
W. J. Varhue ,
E. Adams ,
M. Lavoie ,
P. B. Klein ,
R. Hengehold  and
J. Hunter
P. S. Andry
Affiliation:
Department of Electrical Engineering, University of Vermont, Burlington, VT, 05405
W. J. Varhue
Affiliation:
Department of Electrical Engineering, University of Vermont, Burlington, VT, 05405
E. Adams
Affiliation:
BM Corporation, Essex Junction, VT. 05452
M. Lavoie
Affiliation:
BM Corporation, Essex Junction, VT. 05452
P. B. Klein
Affiliation:
Code 6874, Naval Research Laboratory, Washington, DC, 20375-5347
R. Hengehold
Affiliation:
AFIT / ENP, Wright-Patterson AFB, Dayton, OH, 45433-7765
J. Hunter
Affiliation:
AFIT / ENP, Wright-Patterson AFB, Dayton, OH, 45433-7765
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Abstract

Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430°C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metal organic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscatter spectrometry, secondary ion mass spectroscopy and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl-3,5-heptanedionato) erbium (III) indicated that excessive interstitial carbon lowered epitaxial quality and reduced photoluminescent intensity. In this study, much of the carbon was introduced onto substitutional sites maintaining good epitaxial growth. A response surface method was employed to find the plasma growth parameters yielding the highest quality luminescent films. Luminescent intensity increased for anneals up to 600°C but decreased at higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 57
Copyright
Copyright © Materials Research Society 1996

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