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A Low-Range Drift-Free Bio-compatible Pressure Sensor Based on P(VDF-TrFE) Piezoelectric Thin Film

Published online by Cambridge University Press:  31 January 2011

Xiaoyang Li ,
Timothy Reissman ,
Fan Yu  and
Edwin C. Kan
Xiaoyang Li
Affiliation:
[email protected], Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
Timothy Reissman
Affiliation:
[email protected], Cornell University, Mechanical and Aerospace Engineering, ITHACA, New York, United States
Fan Yu
Affiliation:
[email protected], Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
Edwin C. Kan
Affiliation:
[email protected], Cornell University, Electrical and Computer Engineering, ITHACA, New York, United States
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Abstract

A low-range pressure sensor (0-100kPa) based on the P(VDF-TrFE) piezoelectric thin film is proposed, where the long-term drift is eliminated by operating near the piezoelectric resonance. The pressure sensor is designed for blood pressure and tissue swelling pressure monitoring. The poled 50μm±1μm P(VDF-TrFE) copolymer film is used as the sensing element, with all fabrication and assembly materials biocompatible. A modified Butterworth-Van Dyke (BVD) [1] equivalent circuit model is used to characterize the sensor behavior. The pressure sensor exhibits negligible drift in weeks of operation. The device shows a sensitivity of 0.038MHz/kPa resonance frequency shift under stress, which leads to a maximum readout change of 1.1%/kPa in the present setup.

Keywords

sensorpiezoelectricacoustic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD05-29
Copyright
Copyright © Materials Research Society 2010

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References

1 Dyke, K. S. Van, “The piezoelectric resonator and its equivalent network,” Proc. IRE, 16, pp. 742–764 (1928).Google Scholar
2 Park, K.T. Klafter, R.D. and Bloomefield, P.E. “A charge readout algorithm for piezoelectric force transducers,” Intl. Symp. Applications of Ferroelectrics, 1986, p. 715.Google Scholar
3 Martin, S. J. Granstaff, V. E. and Frye, G. C. “Characterization of a quartz crystal microbalance with simultaneous mass and liquid loading,” Anal. Chem. 63, pp. 2272–2281 (1991).Google Scholar
4 Reed, C. E. Kanazawa, K. K. and Kaufman, J. H. “Physical description of a viscoelastically loaded AT-cut quartz resonator,” J. Appl. Phys. 68 (5), pp. 1993–2001 (1990).Google Scholar
5 Chen, P. and Wu, L. “The equivalent circuit of an AT-cut quartz resonator and its application,” Jpn. J. Appl. Phys. 39, pp. 2710–2713 (2000).Google Scholar
6 Jacquot, B. C. Lee, C. Shen, Y. N. and Kan, E. C. “Time-resolved ion and molecule transport sensing with microfluidic integration by chemoreceptive neuron MOS transistors (CíMOS),” Proc. IEEE Sensors, 2005, pp. 101–104.Google Scholar
7 Jacquot, B. C. Munoz, N. and Kan, E. C. “Thermal and pressure sensing by chemoreceptive neuron MOS transistors (CìMOS) with PVDF coating,” Mater. Res. Soc. Symp. Proc., 952 (2007).Google Scholar
8 Ngalamou, L. Noury, N. Chamberod, E. and Benech, Ph., “Analysis of the sensitivity and the temperature influence of a static force sensor based on a PVDF resonator,” Sensors and Actuators A57, pp. 173–177 (1996).Google Scholar