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Low-Field Colossal Magnetoresistance in Manganite Tunnel Junctions

Published online by Cambridge University Press:  10 February 2011

J. Nassar ,
M. Viret ,
M. Drouet ,
J. P. Contour ,
C. Fermon  and
A. Fert
J. Nassar
Affiliation:
UMR CNRS-Thomson CSF, Domaine de Corbeville, F-91404, Orsay
M. Viret
Affiliation:
CEA Saclay, Service de l'Etat Condensé, F-91191 Gif sur Yvette
M. Drouet
Affiliation:
UMR CNRS-Thomson CSF, Domaine de Corbeville, F-91404, Orsay
J. P. Contour
Affiliation:
UMR CNRS-Thomson CSF, Domaine de Corbeville, F-91404, Orsay
C. Fermon
Affiliation:
CEA Saclay, Service de l'Etat Condensé, F-91191 Gif sur Yvette
A. Fert
Affiliation:
CEA Saclay, Service de l'Etat Condensé, F-91191 Gif sur Yvette
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Abstract

Large magnetoresistance values are obtained on tunnel junctions epitaxially deposited by pulsed-laser deposition and consisting of ferromagnetic manganite La0.67Sr0.33MnO3 electrodes separated by various tunnel barriers: SrTiO3, PrBaCu2.8Ga0.2O7 and CeO2. The magnetoresistance can be decomposed into a low-field and a high-field contribution. The latter is attributed to the presence of canted interfacial manganite phases, as confirmed by the temperature behaviour of the resistance. A low-field magnetoresistance ratio of 450% below 100 Oe is obtained on a sample with a SrTiO3 barrier, indicating a spin polarization value in excess of 0.83 for the manganite.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 494: Symposium V – Science & Technology of Magnetic Oxides , 1997 , 231
Copyright
Copyright © Materials Research Society 1998

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References

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