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Low Temperature Tungsten Deposition by Arf-Laser Induced Photo-CVD

Published online by Cambridge University Press:  25 February 2011

Rutger L. Krans ,
Arjan Berntsen  and
Wim C. Sinke
Rutger L. Krans
Affiliation:
FOM-Institute for Atomic & Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Arjan Berntsen
Affiliation:
FOM-Institute for Atomic & Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
Wim C. Sinke
Affiliation:
FOM-Institute for Atomic & Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Laser-induced Chemical Vapor Deposition of tungsten on Si(100) using WF6 and H2 has been investigated using a high-vacuum system comprising a cold-wall reactor. The activation source is a pulsed ArF-excimer laser. The deposition rate depends linearly on the repetition rate, when H2 is used as a reducing agent. When no H2 is used the laser radiation suppresses deposition.

At deposition temperatures down to 200 °C laser deposited layers have resistivities better than 20 μΩ cm. Thick layers have resistivities down to 8 μΩ cm. There is a direct relation between layer thickness and resistivity. X-ray diffraction revealed the layers to consist of α-tungsten. β-tungsten was only obtained for those thermally deposited layers where growth was slower than expected.

Nuclear reaction analysis of fluorine showed that most fluorine is present near the W-Si interface, and that the amount of fluorine relative to the amount of tungsten in the layer decreases markedly with deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 597
Copyright
Copyright © Materials Research Society 1990

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References

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