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Low Temperature Thermal Chemical Vapor Deposition of Silicon Nitride Thin Films for Microelectronics Applications

Published online by Cambridge University Press:  10 February 2011

Spyridon Skordas ,
George Sirinakis ,
Wen Yu ,
Di Wu ,
Haralabos Efstathiadis  and
Alain E. Kaloyeros
Spyridon Skordas
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
George Sirinakis
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
Wen Yu
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
Di Wu
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
Haralabos Efstathiadis
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
Alain E. Kaloyeros
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany - SUNY, Albany, New York, 12222
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Abstract

Silicon nitride technology has been incorporated in ultra-large scale integration (ULSI) microchip fabrication, thin film transistors (TFT), solar cells, and many other applications in a rapidly expanding market. Nevertheless, silicon nitride technologies currently in use face considerable limitations. Low pressure chemical vapor deposition (LPCVD) occurs at relatively high temperature (>700 °C) and plasma enhanced chemical vapor deposition (PECVD), although occurring at temperatures below 300 °C, produces hydrogen-rich films and could be self-limiting in terms of conformality and damage to the devices due to ion bombardment. In the present work, successful low temperature thermal chemical vapor deposition (LTCVD) of silicon nitride is reported on 8” silicon wafers. The use of a halide-based silicon precursor, tetraiodosilane (SiI4) has led to the deposition of high quality silicon nitride thin films at temperatures as low as 300 °C.

Characterization of resulting film properties has been performed to determine their dependence on deposition parameters by Auger Electron Spectroscopy (AES), Rutherford Backscattering Spectroscopy (RBS), Fourier Transform Infrared (FTIR), Nuclear Reaction Analysis (NRA), Ellipsometry, Capacitance-Voltage (C-V), and Current-Voltage (I-V) measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 109
Copyright
Copyright © Materials Research Society 2000

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References

1 Powell, M. J., Easton, B. C., and Hill, O. F., Appl. Phys. Lett. 38, 794 (1981).Google Scholar
2 Niihara, K. and Hirai, T., J. Mater. Sci., 12, 1233 (1977).Google Scholar
3 Sherman, S., Wagner, S., Mucha, J., and Gottscho, R. A., J. Electrochem. Soc. 144, 3198 (1997).Google Scholar
4 Frohman-Bentchkwsky, D. and Lenzlinger, M., J. Appl. Phys., 40, 3307 (1969).Google Scholar
5 Smith, F. W. and Yin, Z., J. Non-Cryst. Solids 137–138, 879 (1991).Google Scholar
6 Manabe, Y. and Mitsuyu, T., J. Appl. Phys., 66, 2475 (1989).Google Scholar
7 Ye, C., Ning, Z., Shen, M., Wang, H., and Gan, Z., Appl. Phys. Lett., 71, 336 (1997).Google Scholar
8 Lin, X., Endisch, D., Chen, X., and Kaloyeros, Alain, Mat. Res. Soc. Symp. Proc., 495, 107 (1998).Google Scholar
9 CRC Handbook of Chemistry and Physics, 75th Ed., ed. Lide, D. R. Jr. Google Scholar
10 Chen, X., Peterson, G. G., Goldberg, C., Nuesca, G., Frisch, H. L., Kaloyeros, A. E., and Arkles, B., J. Mater. Res., 14, No.5, 2043 (1999).Google Scholar
11 EerNisse, E., J. Appl. Phys., 48, 3337 (1977).Google Scholar
12 Hasegawa, S., Amano, Y., Inokuma, T. and Kurata, Y., J. Appl. Phys., 72, 5676 (1992).Google Scholar
13 Habermehl, S., J. Appl. Phys., 83, 4672 (1998).Google Scholar
14 Lanford, W. and Rand, M., J. Appl. Phys., 49, 2473 (1978).Google Scholar
15 Cotler, T. and Chapple-Sokol, J., J. Electrochem. Soc. 140, 2071 (1993).Google Scholar