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Low Temperature Synthesis of Polycrystalline Diamond by Microwave Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

R. Ramesham ,
C. Ellis ,
T. Roppel ,
D.A. Jaworske  and
W. Baugh
R. Ramesham
Affiliation:
Electrical Engineering Department Alabama Microelectronics Scienceand Technology Center Auburn University, AL 36849–5201
C. Ellis
Affiliation:
Electrical Engineering Department Alabama Microelectronics Scienceand Technology Center Auburn University, AL 36849–5201
T. Roppel
Affiliation:
Electrical Engineering Department Alabama Microelectronics Scienceand Technology Center Auburn University, AL 36849–5201
D.A. Jaworske
Affiliation:
Lewis Research Center National Aeronauticsand Space Administration Cleveland, OH 44135–3127
W. Baugh
Affiliation:
Electrical Engineering Department Alabama Microelectronics Scienceand Technology Center Auburn University, AL 36849–5201
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Abstract

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (<950° C) using a mixture of methane and hydrogen gases by high pressure microwave plasma assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600° C using our technique previously used at 930° C. Decrease in the diamond particle size and growth rate, and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. The morphology is analyzed by scanning electron microscopy and the as-deposited films are identified by Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 341
Copyright
Copyright © Materials Research Society 1991

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References

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