Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-20T06:30:36.995Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Syntheses of Nano-crystalline Silicon Film and Si Nanorods by Hot-Wire CVD

Published online by Cambridge University Press:  01 February 2011

Te-Chi Wong  and
Jih-Jen Wu
Te-Chi Wong
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Jih-Jen Wu
Affiliation:
Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan
Get access

Abstract

Low-temperature growth of nano-crystalline silicon film and silicon nanorods by hot-wire chemical vapor deposition (HWCVD) using SiCl4/H2 gases are reported here. Nano-crystalline silicon films were deposited at a filament temperature of 1800°C, SiCl4/H2 flow rate ratio of 8/37 sccm and a substrate temperature of 150°C. The volume fraction of the crystallinity of the film characterized by Raman spectroscopy is 82%. The TEM analysis reveals that the average size of nano-crystalline silicon film is 5nm. Silicon nanorods with an average diameter of 80 nm were obtained as the SiCl4/H2 flow rate ratio was reduced to 5/30 sccm at substrate temperatures lower than 200°C. TEM analyses reveal that Si nanocrystals are embedded in an amorphous nanorods with fish-born like structure.

Keywords

Nano-crystalline Silicon FilmsSilicon NanorodsLow Temperature GrowthHot-wire Chemical Vapor DepositionSiCl4 and Hydrogen
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A8.2
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Nagahara, T., Fujimoto, K., Kohno, N., Kanhiwagi, Y. and Kakinoki, H.: Jpn. J. Appl. Phys. 31 (1992) 4555.Google Scholar
2) Nagamine, K., Yamada, A., Konagai, M. and Takahashi, K., Jpn. J. Appl. Phys. 26 (1987) L951.Google Scholar
3) Kakinuma, H., Mohri, M., Sakamoto, M. and Tsuruoka, T., J. Appl. Phys. 70 (1991) 7374.Google Scholar
4) Mohri, M., Kakinuma, H., Sakamoto, M. and Sawai, H., Jpn. J. Appl. Phys. 30 (1991) L779.Google Scholar
5) Shirai, H., Fukai, C., Sakuma, Y. and Moriya, Y., Journal of Non-crystalline Solids, 266-269 (2000) 131.Google Scholar
6) Wong, T.C. and Wu, J.J, Jpn. J. Appl. Phys, 40 (2001) L1207.Google Scholar
7) Guo, L., Toyoshima, Y., kondo, M. and Matsuda, A., Appl. Phys. Lett. 75 (1999) 3515.Google Scholar
8) Kamins, T., Polycrystalline Silicon for Integrated Circuits and Displays (Kluwer Academic Publisher, U.S.A., 1998) 2nd ed., Chap. 1, p. 43.Google Scholar