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Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

Published online by Cambridge University Press:  28 February 2011

Yung-Jen Lin ,
Ming-Deng Shieh ,
Chiapying Lee  and
Tri-Rung Yew
Yung-Jen Lin
Affiliation:
: Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
Ming-Deng Shieh
Affiliation:
: Department of Chemical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Chiapying Lee
Affiliation:
: Department of Chemical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Tri-Rung Yew
Affiliation:
: Materials Science Center, National Tsing—Hua University, Hsinchu, Taiwan, ROC
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Abstract

Silicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 807
Copyright
Copyright © Materials Research Society 1992

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References

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