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Low Temperature Silicon Dioxide Thin Films Deposited Using Tetramethylsilane for Stress Control and Coverage Applications

Published online by Cambridge University Press:  21 March 2011

Xin Lin  and
Stephen J. Fonash
Xin Lin
Affiliation:
SMARTMOS Technology Center, DigitalDNA Laboratory, Motorola SPS, 2200 West Broadway Road, M350, Mesa, AZ 85202, U.S.A.
Stephen J. Fonash
Affiliation:
PSU Nanofabrication Facility, The Pennsylvania State University, University Park, PA 16802, U.S.A
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Abstract

Low temperature silicon dioxide thin films have been prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon precursor at 100- 200°C in the pressure range of 2- 8 Torr. PECVD TMS oxide thin films deposited at these temperatures and pressures exhibit adjustable stress. The type of stress, including tensile stress, zero stress, and compressive stress, as well as the stress level can be tailored as desired by changing the deposition conditions and film thickness. In addition, the conformality of PECVD TMS oxide thin films varies significantly with the deposition conditions. It improves when the deposition pressure is raised and the substrate temperature is reduced. The mechanisms for the variations of stress and conformality with respect to deposition conditions are discussed in this study. The adjustable stress and conformality of the PECVD TMS oxide make it a promising material for many low temperature applications, such as inter-level dielectric, micro-electro-mechanical systems (MEMs), microfabrication, and large area electronics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L8.9.1
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. DeCrosta, D. A. and Hackenberg, J. J., J. Vac. Sci. Technol. A. 14, 709–713 (1996).Google Scholar
2. Ceiler, M. F. Jr, Kohl, P. A., and Bisdtrup, S. A., J. Electrochem. Soc., 142, 2067–2071 (1995).Google Scholar
3. Lin, X. and Fonash, S., in Advanced Materials and Devices for Large-Area Electronics, edited by Im, J. S., Werner, J. H., S. Uchikoga, Felter, T. E., Voutsas, T. T., and Kim, H. J., (Mater. Res. Soc. Proc. 695E, Warrendale, PA, 2001), D13.2.Google Scholar
4. Ohring, M., The Materials Science of Thin Films. Boston: Academic Press, 413–431 (1992).Google Scholar
5. Hu, S. M., J. Appl. Phys., 70, R53–80 (1991).Google Scholar
6. Windischmann, H., Epps, G., Cong, Y., and Collins, R., J. Appl. Phys., 69, 2231–2237 (1991).Google Scholar
7. Naseem, H., Haque, M., and Brown, W., in Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, edited by Deen, M., Brown, W., Sundaram, K., and Raider, S., (The Electrochemical Society, Pennington, NJ, 1997), 97-10, 217–231.Google Scholar
8. Reber, D. and Fonash, S., in Flat-Panel Display Materials, edited by Parsons, G. N., Tsai, C.-C., Fahlen, T. S. and Seager, C. H., (Mater. Res. Soc. Proc. 508, Warrendale, PA, 1998) 121–126.Google Scholar