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Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Sung-Jae Joo ,
Ki-Hyun Hwang ,
Seok-Hee Hwang ,
Euijoon Yoon  and
Ki-Woong Whang
Sung-Jae Joo
Affiliation:
Department of Inorganic Materials Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Ki-Hyun Hwang
Affiliation:
Department of Inorganic Materials Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Seok-Hee Hwang
Affiliation:
Department of Electrical Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Euijoon Yoon
Affiliation:
Department of Inorganic Materials Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Ki-Woong Whang
Affiliation:
Department of Electrical Engineering & Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
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Abstract

Dislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 433
Copyright
Copyright © Materials Research Society 1995

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References

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