Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:02:22.098Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Processed Metal-Semiconductor-Metal Phtodetectors on ZnSe/SI-GaAs (100)

Published online by Cambridge University Press:  10 February 2011

Hyesook Hong ,
Wayne A. Anderson ,
Eunwha Lee ,
Huicheng Chang ,
Myunghee Na  and
Hong Luo
Hyesook Hong
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Wayne A. Anderson
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Eunwha Lee
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Huicheng Chang
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Myunghee Na
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Hong Luo
Affiliation:
State University of New York at Buffalo, Center for Advanced Photonic and Electronic Materials, Dept. of Electrical and Computer Engineering, 208 Bonner Hall, Amherst, NY. 14260, USA
Get access

Abstract

Low temperature (LT) processed ZnSe MSM photodetectors can be used for detecting Gamma rays or X-rays using scintillation crystals in many space and medical applications. Metalsemiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 μm, 3 μm, and 4 μm spacing on one chip. Probimide and SiO2 thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by photolithography and reactive ion etching. Pd Schottky metal was deposited at a substrate temperature near 77 K using a lift-off technique. The LT metallization provides an improved interface between metal and semiconductor interface. Continuous wave signal to noise ratio (SNR) of 1.57×104 was obtained for 2 μm interdigitated photodetectors, operated under 180 nW optical power at a wavelength of 400 nm. The detectors showed good DC saturation characteristics indicating a low surface recombination. Saturation current without illumination remained at around less than 1 pA for a ± 10 V biasing. Detectors exhibited linearity with light intensity and DC bias voltage suggesting no gain mechanism involved, and showed a high spectral responsivity (0.6 (A/W)) at a wavelength of 450 nm at 5V applied bias.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 523
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Soole, Julian B. D. and Schumacher, Hermann, IEEE J. Quantum Electron., vol.27, no. 3, pp. 737–752 (1991)Google Scholar
2. Böttcher, E. H., Kuhl, D., Hieronymi, F., Dröge, E., Wolf, T., and Bimberg, D., IEEE J. Quantum Electron., vol.28, no. 10, pp. 2343–2357 (1992)Google Scholar
3. Palmer, J. W., Anderson, W. A., Hoelzer, D. T., and Thomas, M., J. Electron. Mat., 25, pp. 1645 (1996)Google Scholar
4. Shi, Z. Q., Wallace, R. L., and Anderson, W. A., Appl. Phys. Lett., 59, pp. 446 (1991)Google Scholar
5. Wang, A. Z. H., Anderson, W. A., and Haase, M. A., J. Appl. Phys., 77(7), pp. 3513–3518 (1995)Google Scholar
6. Klingenstein, M. and Kuhl, J., Sol. State. Electron. vol.37, no.2, pp. 333–340 (1994)Google Scholar
7. Wohlmuth, W., Arafa, M., Fay, P., and Adesida, I., Appl. Phys. Lett, 70(22), pp. 3026–3028 (1997)Google Scholar
8. Chou, S.Y., Liu, M. Y., IEEE J. Quantum Electron., vol.28, no. 10, pp. 2358–2368 (1992)Google Scholar
9. Hong, H., Anderson, W. A., Nagarathnam, S., Cartwright, A., Lee, E. H., Cheng, H. C., Na, M. H., and Luo, H., IEEE 24th Inter. Comp. Semi. Symp., MC2, (1997)Google Scholar
10. Darling, R. B., Youn, H. J., and Kuhn, K. J., J. Light Tech., vol.10, no. 11, pp. 1597–1605 (1992)Google Scholar