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Low Temperature Preparation of y‐bA‐cU‐0 Films by Omcvd

Published online by Cambridge University Press:  28 February 2011

Taiji Tsuruoka ,
Ryodo Kawasaki ,
Hitoshi Abe  and
Susumu Shibata
Taiji Tsuruoka
Affiliation:
Research Laboratory, R&D Division, Oki Electric Industry Co., Ltd. 550‐5, Higashiasakawa‐cho, Hachioji, Tokyo, 193, Japan
Ryodo Kawasaki
Affiliation:
Research Laboratory, R&D Division, Oki Electric Industry Co., Ltd. 550‐5, Higashiasakawa‐cho, Hachioji, Tokyo, 193, Japan
Hitoshi Abe
Affiliation:
Research Laboratory, R&D Division, Oki Electric Industry Co., Ltd. 550‐5, Higashiasakawa‐cho, Hachioji, Tokyo, 193, Japan
Susumu Shibata
Affiliation:
Research Laboratory, R&D Division, Oki Electric Industry Co., Ltd. 550‐5, Higashiasakawa‐cho, Hachioji, Tokyo, 193, Japan
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Abstract

By using N2O for oxygen source, Y‐Ba‐Cu‐O films prepared at 650” C on the SrTiO3 substrates showed zero resistance at 79K. The deposition rate of Y‐Ba‐Cu‐0 films on MgO(l00) substrates by using N2O gas was nearly half of that using 02 gas. X‐ray diffraction patterns of Y‐Ba‐Cu‐0 films grown on SrTiO3(100) and MgO(l00) substrates indicate c‐axis orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 596
Copyright
Copyright © Materials Research Society 1990

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References

1 Berry, A. D., Gaskill, D. K., Holm, R. T., Cukauskas, E. J., Kaplan, R. and Henry, R. L., Appl. Phys. Lett., 52, 17443 (1988)Google Scholar
2 Yamane, H., Kurosawa, H., Iwasaki, H., Masumoto, H., Hiral, T., Kobayashi, N. and Muto, Y., Jpn. J. Appl. Phys., 27, L1275 (1988)Google Scholar
3 Tsuruoka, T., Takahashi, H., Kawasaki, R. and Kanamorl, T., Appl.Phys. Lett., 54, 1808 (1989)Google Scholar
4 Berberich, P., Tate, J., Dletsche, W. and Kinder, H., Appl. Phys. Lett., 53, 925 (1988)Google Scholar
5 Aida, T., Tsukamoto, A., Imagawa, K., Fukagawa, T., Salto, S. and Shlndo, K., Jpn. J. Appl. Phys., 28, 635 (1989)Google Scholar
6 Abe, H., Tsuruoka, T. and Nakamorl, T., Jpn. J. Appl. Phys., 27, L1473(1988)Google Scholar