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Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

Published online by Cambridge University Press:  17 March 2011

Hiroshi Funakubo ,
Kuniharu Nagashima ,
Masanori Aratani ,
Kouji Tokita ,
Takahiro Oikawa ,
Tomohiko Ozeki ,
Gouji Asano  and
Keisuke Saito
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Kuniharu Nagashima
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Masanori Aratani
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Kouji Tokita
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Takahiro Oikawa
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Tomohiko Ozeki
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Gouji Asano
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Keisuke Saito
Affiliation:
Analytical Division, Philips Japan, Ltd., Kanagawa, Japan
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Abstract

Pb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.

In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.

This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C1.1.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Mannish, A., Ferroelectrics 102, 69 (1990).Google Scholar
2. Suzuki, H., Koizumi, T., Kondo, Y. and Kaneko, S., J. Eur. Ceram. Soc. 19, 1397 (1999).Google Scholar
3. Suzuki, H., Othman, M. B., Murakami, K., Kaneko, K. and Hayashi, T., Jpn. J. Appl. Phys. 35, 4896 (1996).Google Scholar
4. Hirano, S., Yogo, T., Kikuta, K., Araki, Y., Saito, M. and Ogasawara, S., J. Am. Ceram. Soc. 75, 2785 (1992).Google Scholar
5. Maki, K., Soyama, N., Mori, S. and Ogi, K., Proc. Int. Soc. Int. Ferro. 30, 193 (2000).Google Scholar
6. Nagashima, K., Aratani, M. and Funakubo, H., J.Appl.Phys. 89, 4517 (2001).Google Scholar
7. Saito, K., Oikawa, T., Yamaji, I., Akai, T., and Funakubo, H., J.Cryst. Growth (in press).Google Scholar
8. Oikawa, T., Aratani, M., Saito, K. and Funakubo, H., J.Cryst. Growth (in press).Google Scholar
9. Li, T., Zawadzki, P. and Stall, R., Integ. Ferro. 18, 155(1997).Google Scholar
10. Foster, C. M., Bai, G. R., Csencsits, R., Vetrone, J., Jammy, R., Wills, L. A. and Amano, J., J. Appl. Phys. 8, 2349 (1997).Google Scholar
11. Buskirk, P., Roeder, J., Baum, T., Bilodeau, S., Russell, M., Johnston, S., Carl, R., Dersrochers, D., Hendrix, B. and Hintermaier, F., Integ.Ferro. 21, 273 (1998).Google Scholar
12. Nukaga, N., Mitsuya, M., Suzuki, T., Nishi, Y., Fujimoto, M. and Funakubo, H., Jpn.J.Appl.Phys. 40, 5595 (2001).Google Scholar
13. Nagashima, K., Aratani, M. and Funakubo, H., Jpn. J. Appl. Phys. 39, L996 (2000).Google Scholar
14. Aratani, M., Ozeki, T. and Funakubo, H., Jpn.J.Appl.Phys. 40, L343 (2001).Google Scholar
15. Aratani, M. Oikawa, T., Ozeki, T. and Funakubo, H., Appl.Phys.Lett. 79, 1000 (2001).Google Scholar
16. Funakubo, H., and Nagashima, K., Proc.12th IEEE Int Sym.Appl.Ferro. 67(2000).Google Scholar
17. Tokita, K., Aratani, M., Ozeki, T. and Funakubo, H., Key. Eng. Mater. 216, 83 (2001).Google Scholar
18. Tokita, K., Aratani, M. and Funakubo, H., Ferroelectrics (in press).Google Scholar
19. Aratani, M., Nagashima, K. and Funakubo, H., Jpn.J.Appl.Phys. 40, 4126 (2001).Google Scholar
20. Funakubo, H., Oikawa, T., Nagashima, K., Aratani, M. and Saito, K., Key.Eng.Mater. (submitted for publication).Google Scholar
21. Asano, G., Oikawa, T., Oikawa, K., Okada, K. and Funakubo, H., Appl.Phys.Lett., (submitted for publication).Google Scholar
22. Mitsuya, M., Nukaga, N., Watanabe, T., Funakubo, H. and Saito, K., Jpn.J.Appl.Phys., 40, L758 (2001).Google Scholar
23. Funakubo, H., Mitsuya, M., Watanabe, T. and Nukaga, N., Integ.Ferro., (in press).Google Scholar
24. Watanabe, T. and Funakubo, H., Jpn.J.Appl.Phys. 39, 5211 (2000).Google Scholar
25. Nagashima, K. and Funakubo, H., Jpn.J.Appl.Phys. 39, 212 (2000).Google Scholar
26. Funakubo, H., Nagashima, K., Shinozaki, K. and Mizutani, N., Thin Solid Films 368, 261 (2000).Google Scholar
27. Higashi, N., Murakami, Y., Machida, H., Seki, S., Sawada, Y. and Funakubo, H., Thin Solid Film, (Submitted for publication).Google Scholar
28. Okuda, N., Matsuzaki, T., Shinozaki, K., Mizutani, N. and Funakubo, H., Trans. Mater.Res.Soc.Jpn., 24, 51 (1999)Google Scholar
29. Okuda, N., Saito, K. and Funakubo, H., Jpn.J.App.Phys., 39, 572 (2000).Google Scholar
30. Higashi, N., Watanabe, T., Saito, K., Yamaji, Y., Akai, T., and Funakubo, H., J.Cryst.Growth 229, 450 (2001).Google Scholar