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Low Temperature Preparation of BaTiO3 Films on Silicon

Published online by Cambridge University Press:  21 February 2011

M.E. Pilleux  and
V.M. Fuenzalida
M.E. Pilleux
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas, Departamento de Física, Casilla 487-3, Santiago, Chile
V.M. Fuenzalida*
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas, Departamento de Física, Casilla 487-3, Santiago, Chile
*
†To whom correspondence should be addressed
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Abstract

Insulating BaTiO3 thin films were obtained on titanium coated silicon wafers using a novel low temperature technique. They were produced hydrothermally by introducing the substrate in a 0.25M Ba(OH)2 solution inside an autoclave and heating in the 200- 250°C range for 8 hours. This treatment delivered smooth pinhole-free films on the Ti with thicknesses ranging from 35nm (200°C) to 45nm (250°C), with grains in the 100- 300nm diameter range in all films. The films exhibited a dielectric constant up to 227, a breakdown field of 70MV/m, and a dc resistivity of 4.106Ωm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

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