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The Low Temperature Polysilicon TFT Technology for Manufacturing of Active Matrix Liquid Crystal Displays

Published online by Cambridge University Press:  15 February 2011

Tatsuo Morita ,
Shuhei Tsuchimoto  and
Nobuo Hashizume
Tatsuo Morita
Affiliation:
Central Research Laboratories Sharp Corp.,Tenri Nara, Japan
Shuhei Tsuchimoto
Affiliation:
Central Research Laboratories Sharp Corp.,Tenri Nara, Japan
Nobuo Hashizume
Affiliation:
Central Research Laboratories Sharp Corp.,Tenri Nara, Japan
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Abstract

The amorphous silicon thin transistor (a-Si TIFT) has successfully industrialized the active matrix liquid crystal displays (AMLCDs), which would get a vast market on the basis of their wide potential use for displays. Whereas, the polysilicon TFT (p-Si TFT) also has been intensely investigated and intended to realize smarter AMLCDs, with monolithic peripheral circuits.

In this paper, we will discuss the applicable range of low temperature p-Si TFTs compared with high temperature p-Si TFTs. After reviewing the materials which comprise low temperature p-Si TFTs, we will introduce our self aligned aluminum gate process which could allow fast addressing even in enlarged AMLCDs in the future.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 71
Copyright
Copyright © Materials Research Society 1994

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