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Low Temperature Pl Characterization of Lpee Grown GaSb and GaInAsSb Epilayers

Published online by Cambridge University Press:  15 February 2011

S. Iyer ,
S. Hegde ,
K.K. Bajaj ,
Ali Abul-Fadl  and
W. Mitchel
S. Iyer
Affiliation:
Department of Electrical Engineering, North Carolina A&T State University, Greensboro, NC 27411.
S. Hegde
Affiliation:
University of Dayton Research Institute, Dayton, OH 45649–0178.
K.K. Bajaj
Affiliation:
Department of Physics,Emory University, Atlanta, GA 30322
Ali Abul-Fadl
Affiliation:
Department of Electrical Engineering, North Carolina A&T State University, Greensboro, NC 27411.
W. Mitchel
Affiliation:
Materials Directorate,Wright Laboratory, Wright Patterson Air Force Base, OH 45433–6533.
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Abstract

We have investigated the low temperature (4.5 K) photoluminescence (PL) spectra of GaSb and GaInAsSb layers. The layers were grown by liquid phase electro-epitaxial (LPEE) technique. Several bound excitomc transitions were observed both in GaSb and GaInAsSb layers. Shift in the PL peak energy corresponding to the band to band transition with temperature was determined. The linear part of the shift above 100K, exhibited a slope of -0.3 meV/K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 41
Copyright
Copyright © Materials Research Society 1994

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References

1. Meulen, Y. J. Van Der, J. Phys. Chem. Solids 28, 25 (1967).Google Scholar
2. Anayama, C., Tanahashi, T., Kuwatsuka, H., Nishiyama, S., Isozumi, S., and Nakajima, K., Appl. Phys. Lett. 56, 239 (1990).Google Scholar
3. Chidley, E. T. R., Haywood, S. K., Henriques, A. B., Mason, N. J., Nicholas, R. J. and Walker, P. J., Semicond. Sci. Technol. 6, 45 (1991).CrossRefGoogle Scholar
4. Lee, M., Nicholas, D. J., Singer, K. E. and Hamilton, B., J. Appl. Phys. 59, 2895 (1986).CrossRefGoogle Scholar
5. Ruhle, W., Jakowetz, W., Wolk, C., Linnebach, R. and Pilkuhn, M., Phys. Stat. Sol.(B) 73, 255 (1976).Google Scholar
6. Benoit a la Guillaume, C. and Lavallard, P., Phys. Rev. B 5, 4900 (1972).Google Scholar
7. Johnson, E. J. and Fan, H. Y., Phys. Rev. 139, A1991 (1965).Google Scholar
8. Takenaka, C.,Kusunoki, T. and Nakajima, K., J.Cryst.Growth 114 293(1991)CrossRefGoogle Scholar
9. Okamoto, A., Lagowski, J. and Gatos, H. C., J. Appl. Phys. 53, 1706 (1982).Google Scholar
10. Daniele, J. J. and Lewis, A., J. Electron. Mater. 12, 1015 (1983).Google Scholar
11. Iyer, Shanthi N., Ali, Abul-Fadl, Macrander, Albert T., Lewis, Jonathan H., Collis, Ward J. and Sulhoff, James W., Mat. Res. Symp. Proc. 160, 445 (1990).Google Scholar
12. Iyer, S., Hegde, S., Abul-Fadl, Ali, Bajaj, K. K. and Mitchel, W., Phys. Rev. B. 47, 1329 (1993).Google Scholar
13. Iyer, S., Hegde, S., Bajaj, K. K., Abul-Fadl, A. and Mitchel, W., J. Appl. Phys. 73, 3948 (1993).Google Scholar
14. Varshni, Y. P., Physica 34, 149 (1967).Google Scholar