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Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

Published online by Cambridge University Press:  21 February 2011

SH.M. Makhkamov  and
S.N. Abdurakhmanova
SH.M. Makhkamov
Affiliation:
Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, Uzbekistan
S.N. Abdurakhmanova
Affiliation:
Institute of Nuclear Physics, Uzbekistan Academy of Sciences, Tashkent 702132, Uzbekistan
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Abstract

Studies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 775
Copyright
Copyright © Materials Research Society 1996

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References

1 Qewtt, R.P., Sitnikova, A.A., Sorokin, L.M., J.Phys.Stat.Sol.(Russian). 27, N 3, p.673–677 (1985).Google Scholar
2 Malishev, V.A., J.Phys.and Techn.of Semicond.(Ruseian). 8, N 1, p.148–153 (1974).Google Scholar
3 Makhkamov, Sh.M., Abdurakhmanova, S.N., J.Technical Phye.Lett. (Russian) (in press).Google Scholar
4 Yunusov, M.S., Abdurakhmanova, S.N., Zaykovskaia, M.A., Kalanov, M.U., J.Techn.Phys.Lett. (Russian). 18, N 2, p.61–64 (1992).Google Scholar
5 Balarin, M., J.Phys.St.Sol.(A). 31, p.K111–K114 (1975).Google Scholar
6 Seeger, K., Semiconductror Physics, Springer-Verlag, Wien New York, 1973. 615 p.Google Scholar
7 Newton, J.L., Chatterjee, A.P., Harris, R.D., Watkins, G.D., J.Physica. 116 B, N 1, p.219–223 (1983).Google Scholar
8 Watkins, G.D., Corbett, J.W., Phys.Rev. 138, N 2, p.543–555 (1965).Google Scholar
9 Vavilov, V.S., Kekelidze, N.P., Smirnov, L.S., Effect of Radiations on Semiconductors. Moscow, Nauka, 1978. 191 p.Google Scholar
10 Silin, A.R., Trukhin, A.P., Point Defects and Elemental Excitations in Crystalline and Glassy SiQ2 , Riga, Zinatne, 1985. 244 p.Google Scholar
11 Baba, Y., Sasaki, T.A., Yamamoto, H., Phys.Rev.B. 49, N 1, p.709–711 (1994).Google Scholar