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Low Temperature Oxidation of PTSI on As-Doped Si

Published online by Cambridge University Press:  22 February 2011

J. P. Gambino ,
B. Cunningham ,
F. E. Turene  and
J. F. Shepard
J. P. Gambino
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
B. Cunningham
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
F. E. Turene
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
J. F. Shepard
Affiliation:
IBM East Fishkill, Hopewell Junction, NY 12533
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Abstract

PtSi on As-doped polysilicon oxidizes rapidly at temperatures as low as 500 °C. The resulting SiO2-PtSi and PtSi-polysilicon interfaces are very rough. Silicide inclusions are present in the oxide, probably due to differences in oxidation rate between different PtSi grains. The presence of some inclusions near the SiO2 surface suggests that PtSi dissociates during oxidation. Rapid oxidation does not occur for PtSi on B or P-doped polysilicon, or for As concentrations of 1×1020 cm−3 or less.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 181
Copyright
Copyright © Materials Research Society 1988

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References

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