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Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

Published online by Cambridge University Press:  14 March 2011

Akira Izumi ,
Hidekazu Sato  and
Hideki Matsumura
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa 923-1292, JAPAN
Hidekazu Sato
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa 923-1292, JAPAN
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Ishikawa 923-1292, JAPAN
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Abstract

This paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C4.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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