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Low Temperature Gas Phase Synthesis of Germanium Nanowires

Published online by Cambridge University Press:  01 February 2011

Sanjay Mathur ,
Hao Shen  and
Ulf Werner
Sanjay Mathur
Affiliation:
Institute of New Materials D-66041 Saarbruecken, Germany
Hao Shen
Affiliation:
Institute of New Materials D-66041 Saarbruecken, Germany
Ulf Werner
Affiliation:
Institute of New Materials D-66041 Saarbruecken, Germany
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Abstract

Single crystal Ge nanowires (NWs) were obtained in high yield by gas phase decomposition of germanium di-cyclopentadienylide ([Ge(C5H5)2]), at 325 °C on iron substrates. Highresolution electron microscopy (SEM/TEM) showed Ge NWs to be uniform in terms of diameter (20 nm) and length (> 25 μm). The wire growth is selective and appears to be governed by a Ge-Fe alloy epilayer formed by the reaction between Ge clusters and iron substrate, during the initial stages of the CVD process. The supersaturation of Ge-Fe solid-solution with respect to Ge content induces the spontaneous formation of single crystal germanium nuclei that act as templates for the nanowire growth. X-ray and electron diffraction revealed the NWs to be single crystals of cubic germanium with a preferred growth direction[11–2]. The proposed base-growth model on Fe substrate is supported by TEM, EDX and XPS studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N15.38
Copyright
Copyright © Materials Research Society 2004

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