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Low Temperature Fabrication of Sol-Gel Derived Dielectric (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  31 January 2011

Hideaki Sakurai ,
Toshiaki Watanabe  and
Nobuyuki Soyama
Hideaki Sakurai
Affiliation:
[email protected], Mitsubishi Materials Corporation, Naka-shi, Japan
Toshiaki Watanabe
Affiliation:
[email protected], Mitsubishi Materials Corporation, Sanda, Hyogo, Japan
Nobuyuki Soyama
Affiliation:
[email protected], Mitsubishi Materials Corporation, Sanda, Hyogo, Japan
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Abstract

We studied the nucleation and crystallization of sol-gel derived (Ba0.7Sr0.3)TiO3 [BST(70/30)] thin films at low temperatures between 500 to 600°C on Pt(111)/TiO2/SiO2/Si substrates by a process using a combination of 2-ethyl-hexanoate based solutions and modified film preparation. We found that BST films could be crystallized at 500°C and that the films obtained had a columnar-like grainy microstructure with favorable electrical characteristic such as high relative permittivity (ɛr) of 310 at 10 kHz and high tunability of 51% at a bias electric field of 250 kV/cm. Moreover, we investigated annealing temperature dependence of BST(70/30) thin films. The results indicated er and tunability increased with annealing temperature up to 450 and 58%, respectively.

Keywords

sol-gelpyrolysisnucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1199: Symposium F –Multiferroic and Ferroelectric Materials , 2009 , 1199-F03-65
Copyright
Copyright © Materials Research Society 2010

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