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Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

Published online by Cambridge University Press:  01 February 2011

Terry L. Alford ,
Karthik Sivaramakrishnan ,
Anil Indluru ,
Iftikhar Ahmad ,
Bob Hubbard  and
Theodore David
Terry L. Alford
Affiliation:
[email protected], Arizona State University, 1711 S Rural Rd, ERC 252, Tempe, 85281, United States
Karthik Sivaramakrishnan
Affiliation:
[email protected], Arizona State University, Tempe, Arizona, United States
Anil Indluru
Affiliation:
[email protected], Arizona State University, Tempe, Arizona, United States
Iftikhar Ahmad
Affiliation:
[email protected], Lambda Technologies, Morrisville, North Carolina, United States
Bob Hubbard
Affiliation:
[email protected], Lambda Technologies, Morrisville, North Carolina, United States
Theodore David
Affiliation:
[email protected], Freescale Semiconductor Inc, Tempe, Arizona, United States
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Abstract

Variable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Keywords

microwave heatingdopantSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A16-09
Copyright
Copyright © Materials Research Society 2010

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References

1 Technology Roadmap for Semiconductors (Semiconductor Industry Association) (http://www.itrs.net)Google Scholar
2 Mayer, J.W. and Lau, S.S., Electronic Materials Science: For Integrated Circuits in Si and GaAs, Macmillan Publishing Company, New York, NY (1990).Google Scholar
3 Tu, K.-N., Mayer, J.W., Feldman, L.C., and Mayer, J.W., Electronic Thin Film Science for Electrical Engineers and Materials Scientist, Macmillan Publishing Company, New York, NY (1992).Google Scholar
4 Rzhanov, A.V., Gerasimenko, N.N., Vasil'ev, S.V., and Obodnikov, V.I., Sov. Tech. Phys. Lett. 7, 521 (1981).Google Scholar
5 Kohli, P., Ganguly, S., Kirichenko, T., Lee, H.-J., Banerjee, S., Graetz, E., and Shevelev, M., J. Electron. Mater. 31, 214 (2004).Google Scholar
6 Alford, T.L., Thompson, D.C., Mayer, J.W., and Theodore, N.D., J. Applied Physics 106, 114902 (2009).Google Scholar
7 Alford, T.L., Feldman, L.C., and Mayer, J.W., Fundamentals of Nanoscale Film Analysis, Springer Publishing Company, New York, NY (2008).Google Scholar
8 Thompson, D.C., Decker, J., Alford, T.L., Mayer, J.W., Theodore, N.D., Materials Research Society Proceedings, 0989 A06–18 (2007).Google Scholar
9 Lee, Y.-J., Hsueh, F.-K., Huang, S.-C., Kowalski, J.M., Kowalski, J.E., Cheng, A.T. Y., Koo, A., Luo, G.-L., and Wu, C.-Y., IEEE Electron Device Lett. 30, 123 (2009).Google Scholar