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Low Temperature Deposition of Polycrystalline Silicon thin Films by Hot-Wire CVD

Published online by Cambridge University Press:  15 February 2011

Shuangying Yu ,
Sadanand Deshpande ,
Erdogan Gulari  and
Jerzy Kanicki
Shuangying Yu
Affiliation:
Center for Display Technology and Manufacturing Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109
Sadanand Deshpande
Affiliation:
Center for Display Technology and Manufacturing Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109
Erdogan Gulari
Affiliation:
Center for Display Technology and Manufacturing Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109
Jerzy Kanicki
Affiliation:
Center for Display Technology and Manufacturing Department of Chemical Engineering, University of Michigan, Ann Arbor, MI 48109
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Abstract

In this study, we have deposited polycrystalline silicon (poly-Si) thin films by hot-wire Chemical Vapor Deposition (CVD) using hydrogen and disilane as the reactive gases. We selectively activate hydrogen and let disilane bypass the hot tungsten filament assembly and enter the reactor downstream from hydrogen. This may provide a better process chemistry, and by this approach, we have deposited poly-Si films at a substrate temperature as low as 310°C and at a growth rate as high as 100 Å/min. The substrate temperature is more than 2000C lower and the growth rate is more than twice higher compared to those of LPCVD poly-Si films. The effect of hydrogen flow rate, disilane flow rate and substrate temperature on the deposition rate and structural properties of the polysilicon films are investigated. The deposited films are characterized by transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and X-ray diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 69
Copyright
Copyright © Materials Research Society 1995

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References

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