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Low Temperature Ceramic Coatings for Environmental Protection of Integrated Circuits

Published online by Cambridge University Press:  25 February 2011

Grish Chandra
Grish Chandra*
Affiliation:
Electronics Research, Dow Corning Corporation, Midland, MI 48686
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Abstract

A novel concept for improved environmental protection of integrated circuits uses thin, in-situ formed ceramic layers on the circuit surface. Metastable ceramic precursors, hydrogen silsesquioxane and silacyclobutane, convert to pure silica and amorphous silicon carbide dielectric films respectively upon processing at temperatures from 175 to 250ºC. These twolayer ceramic films were shown to protect silicon CMOS circuits from industry-recognized autoclave and HAST exposure environments for more than 400 hours whereas unprotected circuits always failed within 200 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 97
Copyright
Copyright © Materials Research Society 1991

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References

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