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Low Temiperature Band Transport in Alpha-Hexathienylene Thinfilm-Transistors

Published online by Cambridge University Press:  10 February 2011

L. Torsi ,
A. Dodabalapur ,
L. J. Rothberg ,
A. W. P. Fung  and
H. E. Katz
L. Torsi
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill - NJ 07974 (USA).
A. Dodabalapur
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill - NJ 07974 (USA).
L. J. Rothberg
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill - NJ 07974 (USA).
A. W. P. Fung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill - NJ 07974 (USA).
H. E. Katz
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill - NJ 07974 (USA).
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Abstract

We provide experimental evidence of a transition from thermally activated hopping of small polarons to band transport of delocalized polarons in polycrystalline oligothiophene fieldeffect transistors. We demonstrate that these transport mechanisms are intrinsic, i.e. governed by material-specific parameters such as the electronic overlap integral and the polaron binding energy. At high temperatures the field-effect mobility decreases with decreasing temperature and the transport mechanism is thermally activated hopping. Below a critical temperature Tτ, the field-effect mobility abruptly increases by more than two orders of magnitude and the transport becomes band-like. This behavior is consistent with the theory T. Holstein developed in 1959 for small polaron transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 413: Symposium W – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials III , 1995 , 419
Copyright
Copyright © Materials Research Society 1996

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References

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