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Low Resistance Ohmic Contacts to n-Hg1−xCdxTe Using a HgTe Cap Layer

Published online by Cambridge University Press:  15 February 2011

Patrick W. Leech  and
Geoffrey K. Reeves
Patrick W. Leech
Affiliation:
Telecom Research Laboratories, Clayton, 3168, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Victoria, Australia
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Abstract

Non-alloyed ohmic contacts of HgTe on Hg1−xCdxTe (x = 0.60) with metallisations of Ti, In and Au have been investigated. Layers of HgTe with thickness in the range from 0.1 μm to 1.0 μm were grown by organometallic epitaxy either as an abrubt or a graded junction, depending on the in-situ annealing conditions. The layer thickness and the extent of interdiffusion with the Hg1−CdxTe were determined using Rutherford backscattering spectrometry (RBS). The results have shown that an abrupt rather than a graded structure was essential in order to achieve the minimum value of specific contact resistance, ρc, of ≈5 × 10−5 Ωcm2. In addition, a critical thickness of HgTe (≥0.2 μm) was required in order to obtain a substantial reduction in ρc. For these metal/HgTe/Hg1−xCdxTe contacts, the metal Ti has produced the lowest values of ρc and greatest adhesion to the HgTe. Both of these properties have been attributed to the strong interfacial reaction of the overlayer of Ti with HgTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 109
Copyright
Copyright © Materials Research Society 1994

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