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Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN

Published online by Cambridge University Press:  01 February 2011

Indra Chary ,
Boris Borisov ,
Vladimir Kuryatkov ,
Yuriy Kudryavtsev ,
R Asomoza ,
Sergey A Nikishin  and
Mark Holtz
Indra Chary
Affiliation:
[email protected], Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Boris Borisov
Affiliation:
[email protected], Texas Tech University, Nano Tech center, Lubbock, Texas, United States
Vladimir Kuryatkov
Affiliation:
[email protected], Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Yuriy Kudryavtsev
Affiliation:
[email protected], CINVESTAV, Department of Electrical Engineering, Mexico D.F., Mexico
R Asomoza
Affiliation:
[email protected], CINVESTAV, Department of Electrical Engineering, Mexico D.F., Mexico
Sergey A Nikishin
Affiliation:
[email protected], Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
Mark Holtz
Affiliation:
[email protected], Texas Tech University, Nano Tech Center, Lubbock, Texas, United States
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Abstract

We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN with a hole concentration of 6.5 x 1017 cm-3, shows the lowest ρc of ˜9.2 x 10-6 Ω cm2, when GaN was treated in HCl:H2O (3:1) solution before metal deposition and annealed at 500°C for 10 minutes in 90% N2 and 0% O2 atmosphere. Similar procedure applied on p-AlxGa1-xN (x = 5-7%), with a hole concentration of 2.3 x 1017 cm-3, yields a ρc of 1.8 x 10-4 Ω cm2. An increase is observed in ρc when Mg doping exceeds 4 x 1019 cm-3 in both p-GaN and p-AlGaN. This is attributed to Mg self compensation. This increase is more pronounced in AlGaN which we attribute to the presence of residual native aluminum oxides.

Keywords

electrical propertiesthermionic emissionx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-30
Copyright
Copyright © Materials Research Society 2009

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References

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