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Low Power Phase Change Memory via Block Copolymer Self-assembly Technology

Published online by Cambridge University Press:  09 July 2013

Beom Ho Mun ,
Woon Ik Park ,
You Yin ,
Byoung Kuk You ,
Jae Jin Yun ,
Kung Ho Kim ,
Yeon Sik Jung  and
Keon Jae Lee
Beom Ho Mun
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Woon Ik Park
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
You Yin
Affiliation:
Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma 376-8515, Japan
Byoung Kuk You
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Jae Jin Yun
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Kung Ho Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Yeon Sik Jung
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
Keon Jae Lee*
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea
*
*Email: [email protected]
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Abstract

We report the demonstration of low power phase change memory (PCM) by forming thin self-assembled SiOx nanostructures between Ge2Sb2Te5 (GST) and a TiN heater layer utilizing a block copolymer (BCP) self-assembly technology. The reset current was decreased about three-fold as fill factor, which is the occupying area fraction of self-assembled SiOx nanostructures on a TiN heater layer, increased to 75.3%. The electro-thermal simulation shows the better heat efficiency due to the nano-patterned insulating oxide.

Keywords

memoryelectrical propertiesself-assembly
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1556: Symposium W – Piezoelectric Nanogenerators and Piezotronics , 2013 , mrss13-1556-w02-01
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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