Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T09:45:29.091Z Has data issue: false hasContentIssue false

Low Potential Li Insertion in Transition Metal Oxides

Published online by Cambridge University Press:  10 February 2011

F. Leroux
Affiliation:
University of Waterloo, Department of Chemistry, Waterloo, Ontario Canada N2L 3G1; [email protected]
L. F. Nazar
Affiliation:
University of Waterloo, Department of Chemistry, Waterloo, Ontario Canada N2L 3G1; [email protected]
Get access

Abstract

Low-potential Li insertion materials comprised of molybdenum oxides (AxMoO3) have been prepared by a “chimie douce” route. Li insertion below 200 mV is associated with dramatic transformation of the structure, leading to a material which displays good cyclability with a high reversible specific capacity of 940 mA/g in the voltage window 3.0–0.005V (volumetric capacity of 4000 mAh/cc), albeit with notable polarization on charge. The structural and compositional changes on discharge to 200 mV have been studied by a combination of XRD, and XAS. The interlayer ions have also been exchanged for Sn, and the electrochemical characteristics of these materials are compared with the alkali derivatives.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wilson, A.M. and Dahn, J.R., J. Electrochem. Soc., 142, 326 (1995).10.1149/1.2043994Google Scholar
2. Auborn, J.J and Barberio, Y.L., J. Electrochem. Soc., 134, 638 (1987)10.1149/1.2100521Google Scholar
3. Idota, Y., US Patent Application, 5478671 (1995); H. Tomayama, Japanese Patent Application, 07–029608 (1995).Google Scholar
4. Sigala, C., Guyomard, D., Piffard, Yves, and Tournoux, M., C. R. Acad. Sci. Paris, 320, 523 (1995)Google Scholar
5. Kumagai, N., Japanese Patent, 08–241707 (1996).Google Scholar
6. Leroux, F., Guyomard, D., Piffard, Y., and Tournoux, M., French Patent Application, 95.02097 (1995)Google Scholar
7. Thomas, D.M. and McCarron, E.M., Mat. Res. Bull., 21, 945 (1986)10.1016/0025-5408(86)90132-7Google Scholar
8. Kerr, T. A. and Nazar, L.F., J. Mater. Chem., 8, 2005 (1996).10.1021/cm960071qGoogle Scholar
9. Michalowicz, A., in Logiciels pour la chimie, SFC, Paris (1991).Google Scholar
10. Margalit, N., J. Electrochem. Soc., 121, 1460 (1974);10.1149/1.2401709Google Scholar
Besenhard, J.O, Heydecke, J. and Fritz, H.P., Solid State Ionics, 6, 215 (1982)Google Scholar
11. Courtney, I.A., and Dahn, J.R., J. Electrochem. Soc., 144, 2943 (1997).10.1149/1.1837941Google Scholar