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Low Optical Loss Wafer Bonded GaAs Structures for Quasi-Phase-Matched Second Harmonic Generation

Published online by Cambridge University Press:  10 February 2011

YewChung Sermon Wu ,
Robert S. Feigelson ,
Roger K. Route ,
Dong Zheng ,
Leslie A. Gordon ,
Martin M. Fejer  and
Robert L. Byer
YewChung Sermon Wu
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Robert S. Feigelson
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Roger K. Route
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Dong Zheng
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Leslie A. Gordon
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Martin M. Fejer
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
Robert L. Byer
Affiliation:
Center for Nonlinear Optical Materials, Stanford University, CA94305, [email protected]
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Abstract

A periodic GaAs wafer-bonded structure has been proposed for quasi-phase-matched (QPM) second harmonic generation (SHG). However, current bonding processes often lead to unacceptable optical losses and poor device performance. In this study, three sources of optical losses in wafer-bonded structures were investigated, (1) interfacial defects between the wafers, (2) bulk defects within the wafers, and (3) decomposition at the exposed outer surfaces. Surface losses due to incongruent evaporation were easily eliminated by repolishing the outer surfaces. However, to minimize the losses from interfacial and bulk defects, it was necessary to investigate the relationship between these defects and the bonding parameters. It was found that an increase in bonding temperature and/or time led to a decrease in interfacial defects, but an increase in bulk and surface defects. Through a trade-off process, optimized processing conditions were developed which permitted the preparation of bonded stacks containing over 50 (100)-oriented GaAs wafers, and about 40 layers of (110))-oriented GaAs wafers. Optical losses as low as 0.1 - 0.3% /interface (at 5.3 μm and 10.6 μm) were achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 481
Copyright
Copyright © Materials Research Society 1998

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References

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