Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-19T11:07:25.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Frequency Noise in Small MOS Devices

Published online by Cambridge University Press:  03 September 2012

Michael J. Uren
Michael J. Uren*
Affiliation:
Defence Research Agency, RSRE Malvern, St. Andrew's Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom
Get access

Abstract

Random telegraph signals can be seen in the conductivity of submicron MOSFETs due to capture and emission from individual SiO2 defects. They show activated capture times, temperature dependent energy levels as well as a complex scattering behaviour. It is shown how 1/f noise in large MOSFETs arises naturally from the properties of these defects and how models based on this understanding can be constructed. 1/f noise is shown to be a poor tool for the study of the traps due to the loss of information associated with averaging over many active signals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 751
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. McWhorter, A L, in Semiconductor Surface Physics, edited by Kingston, R H (University of Pennsylvania, Philadelphia, 1957), p 207.Google Scholar
2. Hooge, F N, Kleinpenning, T. G. M. and Vandamme, L. K. J., Rep. Prog. Phys., 44, 479 (1981).Google Scholar
3. Rails, K S, Skocpol, W J, Jackel, L D, Howard, R E, Fetter, L A, Epworth, R W, Tennant, D M, Phys. Rev. Lett. 52, 228 (1984).Google Scholar
4. Weissman, M B, Rev. Mod. Phys., 60, 537 (1988).Google Scholar
5. Van Vliet, C M, Sol. State Elee, 34, 1 (1991).Google Scholar
6. Kirton, M J and Uren, M J, Adv. in Phys. 38, 367 (1989).Google Scholar
7. Farmer, K R, in Insulating films on semiconductors 1991, edited by Eccleston, W and Uren, M, (Adam Hilger, Bristol 1991).Google Scholar
8. Schulz, M and Karmann, A, in SPIE vol. 1405 fifth congress of the Brazilian society of microelectronics, p2 (1990).Google Scholar
9. Jaros, M, Deep levels in Semiconductors, (Adam Hilger, Bristol, 1982).Google Scholar
10. Kirton, M J and Uren, M J, Appl. Phys. Lett. 48 1270 (1986).Google Scholar
11. Engstrom, O and Grimmeiss, H, Semicond. Sci. Technol. 4, 1106 (1989).Google Scholar
12. Cobden, D H, Uren, M J and Kirton, M J, Appl. Phys. Lett. 56, 1245 (1990).CrossRefGoogle Scholar
13. Cobden, D H and Uren, M J, submitted for publication.Google Scholar
14. Schulz, M, in Insulating films on semiconductors, edited by Eccleston, W and Uren, M, (Adam Hilger, Bristol, 1991).Google Scholar
15. Eyring, H, Henderson, D, Stover, B J and Eyring, E M, Statistical mechanics and dynamics (Wiley, New York, 1989).Google Scholar
16. Hung, K K, Ko, P K, Hu, C and Cheng, Y C, IEEE Elec. Dev. Lett. 11, 90 (1990).Google Scholar
17. Uren, M J, Day, D J and Kirton, M J, Appl. Phys. Lett. 47, 1195 (1985).Google Scholar
18. Nakamura, H, Yasuda, N, Taniguchi, K, Hamaguchi, C and Toriumi, A, Jap. J. Appl. Phys. 28 L2057 (1989).Google Scholar
19. Ando, T, Fowler, A B and Stern, F, Rev. Mod. Phys. 54, 4 37 (1982).Google Scholar
20. Uren, M J and Kirton, M J, Appl. Surf. Sci. 39, 479 (1989).CrossRefGoogle Scholar
21. Uren, M J, Mat. Sci. Forum 83–87, 1519 (1992).Google Scholar
22. Skocpol, W J, in Physics and fabrication of microstructures, edited Kelly, and Weissbuch, (Springer Verlag, 1986).Google Scholar
23. Hung, K K, Ko, P K, Hu, C and Cheng, Y C, IEEE Elec. Dev. Lett. 37. 654 (1990).CrossRefGoogle Scholar
24. Pelz, J and Clarke, J, Phys. Rev. B36, 4479 (1987).Google Scholar
25. Machlup, S, J. Appl. Phys. 25, 341 (1954).CrossRefGoogle Scholar
26. Nicollian, E H and Brews, J R, MOS Physics and Technology, (Wiley, New York, 1982).Google Scholar
27. Kandiah, K, Deighton, M O and Whiting, F B, J. Appl. Phys. 66, 937 (1989).Google Scholar
28. Uren, M J, Collins, S and Kirton, M J, Appl. Phys. Lett. 54, 1448 (1989).Google Scholar
29. Fu, H -S and Sah, C -T, IEEE Trans. Ele. Dev. ED19, 273 (1972).Google Scholar
30. Dutta, P and Horn, M, Rev. Mod. Phys. 53, 497 (1981).Google Scholar
31. Surya, C and Hsiang, T Y, Phys. Rev. B33, 4898 (1986).Google Scholar
32. Reimbold, G, IEEE Trans. Elec. Dev. ED31, 1190 (1984).CrossRefGoogle Scholar
33. Surya, C and Hsiang, T Y, Phys. Rev. B35, 6343 (1987).CrossRefGoogle Scholar
34. Mikoshiba, H, IEEE Trans. Elec. Dev. ED29, 965 (1982).Google Scholar