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Low Energy Electron Microscopy for Semiconductor Applications

Published online by Cambridge University Press:  01 February 2011

Marian Mankos
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Vassil Spasov
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Liqun Han
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Shinichi Kojima
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Ximan Jiang
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Salam Harb
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Luca Grella
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
Cory Czarnik
Affiliation:
[email protected], KLA-Tencor, EBI, 160 Rio Robles, San Jose, CA, 95134, United States
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Abstract

A novel low energy electron microscope (LEEM) aimed at improving the throughput and extending the applications for semiconductor devices has been developed. A dual beam approach, where two beams with different landing energies illuminate the field of view, is used to mitigate the charging effects when the LEEM is used to image semiconductor substrates with insulating or composite (insulator, semiconductor, metal) surfaces. We have experimentally demonstrated this phenomenon by imaging a variety of semiconductor device wafers without deleterious charging effects. Results from several important semiconductor device layers will be illustrated in detail.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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